Übersicht			Auf mobile öffnen

Lieferstatus:	Auf Bestellung (Lieferzeit unbekannt)
Veröffentlichung:	März 2006
Genre:	Naturwissensch., Medizin, Technik
	C / Circuits and Systems / Electrical and Electronic Engineering / Electrical Engineering / Electronic circuits / Electronic Circuits and Systems / Electronics / Electronics and Microelectronics, Instrumentation / Electronics engineering / Elektronik / Elektrotechnik / engineering / Microelectronics / Microwave technology / Microwaves / Microwaves, RF and Optical Engineering / Microwaves, RF Engineering and Optical Communications / Optical engineering mehr...
ISBN:	9781402045554
EAN-Code:	9781402045554
Verlag:	Springer EN
Einband:	Gebunden
Sprache:	English
Dimensionen:	H 235 mm / B 155 mm / D
Gewicht:	1340 gr
Seiten:	294
Illustration:	XIV, 294 p.
Zus. Info:	EUDR exemption - product or manufacturing materials placed on the market prior to 31.12.2025.
Bewertung:	Titel bewerten / Meinung schreiben

Inhalt:

This comprehensive volume presents a wealth of practical knowledge in the field of MOS transistor modeling. Coverage includes the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both PSP and EKV models, and comparisons of physics-based MOSFET models with measurement-based models. The variety of subjects and the high quality content of this volume make it a preferred reference for researchers and users of MOSFET devices and models. The book is recommended for everyone involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.