Übersicht			Auf mobile öffnen

Lieferstatus:	Auf Bestellung (Lieferzeit unbekannt)
Veröffentlichung:	Juni 2017
Genre:	Naturwissensch., Medizin, Technik
	Applied optics / B / Chemistry and Materials Science / Circuits and Systems / Digital and Analog Signal Processing / Electronic circuits / Electronic Circuits and Devices / Electronic Circuits and Systems / Electronic devices & materials / Electronic materials / Electronics# circuits & components / Image processing / Imaging systems & technology / Laser / Lasers / Optical and Electronic Materials / Optical Materials / Optical physics / Optics, Lasers, Photonics, Optical Devices / Photonics / Signal Processing / Signal, Image and Speech Processing / Speech processing systems
ISBN:	9789811043338
EAN-Code:	9789811043338
Verlag:	Springer Nature EN
Einband:	Gebunden
Sprache:	English
Dimensionen:	H 235 mm / B 155 mm / D
Gewicht:	315 gr
Seiten:	64
Illustration:	XXIII, 64 p. 53 illus., 32 illus. in color., schwarz-weiss Illustrationen, farbige Illustrationen
Bewertung:	Titel bewerten / Meinung schreiben

Inhalt:

This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices.