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Herausgeber: 
  • Paul Maki
  • Debdeep Jena
  • Patrick Fay
  • High-Frequency GaN Electronic Devices 
     

    (Buch)
    Dieser Artikel gilt, aufgrund seiner Grösse, beim Versand als 3 Artikel!


    Übersicht

    Auf mobile öffnen
     
    Lieferstatus:   i.d.R. innert 7-14 Tagen versandfertig
    Veröffentlichung:  August 2020  
    Genre:  Naturwissensch., Medizin, Technik 
    ISBN:  9783030202101 
    EAN-Code: 
    9783030202101 
    Verlag:  Springer International Publishing 
    Einband:  Kartoniert  
    Sprache:  English  
    Dimensionen:  H 235 mm / B 155 mm / D 18 mm 
    Gewicht:  487 gr 
    Seiten:  320 
    Zus. Info:  Paperback 
    Bewertung: Titel bewerten / Meinung schreiben
    Inhalt:
    This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides ¿vertically integrated¿ coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.

      
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