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Herausgeber: 
  • Hongyu Yu
  • Tianli Duan
  • Gallium Nitride Power Devices 
     

    (Buch)
    Dieser Artikel gilt, aufgrund seiner Grösse, beim Versand als 3 Artikel!


    Übersicht

    Auf mobile öffnen
     
    Lieferstatus:   Auf Bestellung (Lieferzeit unbekannt)
    Veröffentlichung:  Juni 2017  
    Genre:  Naturwissensch., Medizin, Technik 
    ISBN:  9789814774093 
    EAN-Code: 
    9789814774093 
    Verlag:  Taylor and Francis 
    Einband:  Gebunden  
    Sprache:  English  
    Dimensionen:  H 229 mm / B 152 mm / D 21 mm 
    Gewicht:  652 gr 
    Seiten:  298 
    Illustration:  Farb., s/w. Abb. 
    Bewertung: Titel bewerten / Meinung schreiben
    Inhalt:
    GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China.

    This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices.

    GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

      



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