Übersicht			Auf mobile öffnen

Lieferstatus:	i.d.R. innert 7-14 Tagen versandfertig
Veröffentlichung:	Oktober 2012
Genre:	Naturwissensch., Medizin, Technik
	C / Characterization and Analytical Technique / Characterization and Evaluation of Materials / Chemistry and Materials Science / Electronic materials / Electronics / Electronics and Microelectronics, Instrumentation / Electronics engineering / Materials science / Materials—Surfaces / Microelectronics / Optical and Electronic Materials / Optical Materials / Surface chemistry & adsorption / Surfaces and Interfaces, Thin Films / Surfaces, Interfaces and Thin Film / Testing of materials / Thin films
ISBN:	9783642625831
EAN-Code:	9783642625831
Verlag:	Springer Berlin Heidelberg
Einband:	Kartoniert
Sprache:	English
Serie:	#46 - Springer Series in Materials Science
Dimensionen:	H 235 mm / B 155 mm / D 16 mm
Gewicht:	429 gr
Seiten:	280
Zus. Info:	Paperback
Bewertung:	Titel bewerten / Meinung schreiben

Inhalt:

This book presents fundamental experimental and theoretical developments relating to silicon oxidation for ultra-thin gate oxide formation. Starting with elementary processes taking place during wet chemical cleans prior to oxidation, the focus is then placed on the incorporation of oxygen into the silicon crystal for H-passivated, clean and oxidized silicon surfaces, including oxygen diffusion and defect formation. Experimental methods include scanning tunneling microscopy, x-ray photoelectron and infrared absorption spectroscopies, ion scattering and transmission electron microscopy. Most of the theoretical contributions are based on first-principles calculations, ranging from cluster calculations to supercell and slab calculations. Phenomenological modeling of oxidation is also discussed. The material presented here will enable the reader to gain a deeper understanding of silicon oxidation and ultra-thin oxide formation (and the processes that affect the morphology of silicon oxides).