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Capacitance-Voltage Study on the Effects of Low Energy Electron Radiation on Al0.27Ga0.73N/Gan High Electron Mobility Transistor
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| The effects of radiation on semiconductors are extremely important to the Department of Defense since the majority of the defense informational, navigational and communications systems are now satellite-based. Due to the high radiation tolerance of gallium nitride and a plethora of high temperature, high power and high frequency applications, the prospect that gallium nitride based devices will become key components in a multitude of military satellite-based systems is highly probable. AlxGa1-xN/GaN HEMTs were irradiated at low temperature (~80 K) by 0.45 - 0.8 MeV electrons up to fluences of 1 1015 e-/cm2. Following irradiation, low temperature capacitance-voltage measurements were recorded providing fluence-dependent measurements; additionally low-temperature post-irradiation capacitance-voltage measurements were recorded at twenty-four hour intervals up to 168 hours in order to investigate the room temperature annealing process. Using previously irradiated devices, the effects of a 9 month room temperature anneal were also considered. Capacitance-voltage measurements indicate that low energy electron radiation results in an increase in the transistor channel drain current. |
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