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Autor(en): 
  • Vinod Kumar Khanna
  • Beyond Complementary Metal-Oxide-Semiconductor Nanoelectronics: Diversified Approaches to Transcending Physical Scaling Limits 
     

    (Buch)
    Dieser Artikel gilt, aufgrund seiner Grösse, beim Versand als 3 Artikel!


    Übersicht

    Auf mobile öffnen
     
    Lieferstatus:   Vorankündigung
    Veröffentlichung:  ANGEKÜNDIGT (Oktober 2026)  
    Genre:  Naturwissensch., Medizin, Technik 
     
    Artificial Intelligence / CMOS / CMOS Devices / Condensed matter physics (liquid state & solid state physics) / Condensed matter physics (liquid state and solid state physics) / Electrical Engineering / Electron Spin / Electronic devices and materials
    ISBN:  9781041271727 
    EAN-Code: 
    9781041271727 
    Verlag:  Taylor and Francis 
    Einband:  Gebunden  
    Sprache:  English  
    Dimensionen:  H 234 mm / B 156 mm / D  
    Seiten:  304 
    Illustration:  schwarz-weiss Illustrationen, farbige Illustrationen, Raster,schwarz-weiss, Raster, farbig, Zeichnungen, schwarz-weiss, Tabellen, schwarz-weiss 
    Bewertung: Keine Bewertung vor Veröffentlichung möglich.
    Inhalt:

    Complementary Metal-Oxide-Semiconductor (CMOS) nanoelectronics are approaching their physical limits, leading to issues such as excessive leakage and increased power consumption. New materials, computing methods, and state variables are being investigated to solve these issues. These emerging technologies embrace a wide range of cutting-edge developments aimed at surpassing the physical constraints of traditional CMOS devices. This research is vital for enabling future computing abilities, particularly in devices that could serve new functions in fields such as artificial intelligence and quantum information processing.

    Providing an engaging and clear perspective on the future of nanoelectronics, this book will be a valuable reference for graduate students specializing in electrical engineering, computer engineering, materials science, and physics, as well as for university instructors delivering advanced coursework on nanoelectronics, VLSI design, and solid-state devices. Professional engineers and designers in the semiconductor field who wish to stay up to date on new technologies, as well as investigators in nanoelectronics and semiconductor technology, will also find it useful.

    Key features:

    • Explains why conventional CMOS scaling is reaching its physical and technological limits and outlines new approaches necessary to improve performance.
    • Highlights the importance of moving beyond electric-charge-based computing to explore alternative properties such as electron spin, for information storage and processing.
    • Bridges the gap between devices and systems by integrating the core physics and materials science of devices with high-level architectural design and advanced packaging techniques.

    This book offers an in-depth examination of the challenges associated with conventional CMOS technology, outlining the obstacles and issues encountered with traditional CMOS scaling, including power and energy consumption, as well as variability, and highlighting the necessity for alternative technologies. It presents possible successor technologies to CMOS, including emerging logic devices, memory chips, compute-in-memory architectures, new materials, and integration methods. These technologies leverage alternative physical effects, including spintronics, neuromorphic computing, and quantum phenomena, and introduce novel functionalities to enhance performance.

      



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