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Autor(en): 
  • Chauhan Yogesh Singh
  • Hu Chenming
  • Chetan Kumar Dabhi
  • Debashish Nandi
  • Dinesh Rajasekharan
  • Ananth Sundaram
  • BSIM–SOI Industry-Standard Compact Model: Surface Potential-Based FET Model for RFIC Design 
     

    (Buch)
    Dieser Artikel gilt, aufgrund seiner Grösse, beim Versand als 3 Artikel!


    Übersicht

    Auf mobile öffnen
     
    Lieferstatus:   Vorankündigung
    Veröffentlichung:  ANGEKÜNDIGT (November 2026)  
    Genre:  Naturwissensch., Medizin, Technik 
     
    CAD / circuit design / Circuit Simulation / Circuits & components / compact modeling; MOSFET; depleted silicon; dynamic depletion; device modeling; system-on-chip; circuit design; circuit simulation; PDK; CAD / depleted silicon / Device modeling / dynamic depletion
    ISBN:  9780443439049 
    EAN-Code: 
    9780443439049 
    Verlag:  Elsevier 
    Einband:  Kartoniert  
    Sprache:  English  
    Dimensionen:  H 229 mm / B 152 mm / D 
    Bewertung: Keine Bewertung vor Veröffentlichung möglich.
    Inhalt:
    BSIM-SOI Industry-Standard Compact Model: Surface Potential-Based FET Model for RFIC Design provides complete coverage of compact modeling and design techniques specific to SOI transistors. The book is designed to be the first comprehensive guide that thoroughly explains the industry-standard BSIM-SOI compact model, along with the unique modeling and RF design techniques necessary for the accurate extraction and implementation of the industry standard BSIM-SOI model. This book will be a valuable reference for the expanding field of SOI technology, catering specifically to circuit designers, device engineers, academic researchers, and students.

    This book will equip designers, engineers, and researchers with the knowledge and tools required to optimize SOI-based circuit performance and system integration. The book explains fundamental surface-potential calculations and addresses various real device effects, such as floating body, self-heating, dynamic depletion effects, and layout influences to accurately replicate realistic device behavior. Additionally, the step-by-step parameter extraction procedures for the BSIM-SOI model are outlined, and the results of benchmark tests are also presented.

      



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