This book provides complete coverage of compact modeling and design techniques specific to silicon-on-insulator (SOI) transistors. It is the first comprehensive guide that thoroughly explains the industry-standard surface-potential-based BSIM-SOI compact model (BSIM-SOI 100 series), contrasting it with the legacy threshold-voltage-based BSIM-SOI model (BSIM-SOI 4 series), and provides unique modeling and RF design techniques necessary for the accurate extraction and implementation of the model.
BSIM-SOI is the most widely used compact model for SOI MOSFETs in the semiconductor industry. This book aims to equip designers, engineers, and researchers with the knowledge and tools required to optimize SOI-based RF technology, circuit performance, and system integration using BSIM-SOI. The book explains the fundamental surface-potential calculations and addresses various real device effects (such as floating body effect, self-heating effect, dynamic depletion effect, nonlinear body resistance effect, noise, and various leakages, etc.) and layout influences to accurately replicate realistic device behavior. Additionally, it outlines step-by-step parameter extraction procedures for the BSIM-SOI model and presents results from benchmark circuit validations with a primary focus on RF SoC applications.
This book will be a valuable reference for the expanding field of SOI technology, catering specifically to circuit designers, device engineers, academic researchers, and students. |
Vorankündigung
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