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Autor(en): 
  • John P. Uyemura
  • Circuit Design for CMOS VLSI 
     

    (Buch)
    Dieser Artikel gilt, aufgrund seiner Grösse, beim Versand als 3 Artikel!


    Übersicht

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    Lieferstatus:   i.d.R. innert 5-10 Tagen versandfertig
    Veröffentlichung:  November 2011  
    Genre:  Naturwissensch., Medizin, Technik 
    ISBN:  9781461366096 
    EAN-Code: 
    9781461366096 
    Verlag:  Springer Us 
    Einband:  Kartoniert  
    Sprache:  English  
    Dimensionen:  H 235 mm / B 155 mm / D 26 mm 
    Gewicht:  709 gr 
    Seiten:  472 
    Zus. Info:  Paperback 
    Bewertung: Titel bewerten / Meinung schreiben
    Inhalt:
    During the last decade, CMOS has become increasingly attractive as a basic integrated circuit technology due to its low power (at moderate frequencies), good scalability, and rail-to-rail operation. There are now a variety of CMOS circuit styles, some based on static complementary con­ ductance properties, but others borrowing from earlier NMOS techniques and the advantages of using clocking disciplines for precharge-evaluate se­ quencing. In this comprehensive book, the reader is led systematically through the entire range of CMOS circuit design. Starting with the in­ dividual MOSFET, basic circuit building blocks are described, leading to a broad view of both combinatorial and sequential circuits. Once these circuits are considered in the light of CMOS process technologies, impor­ tant topics in circuit performance are considered, including characteristics of interconnect, gate delay, device sizing, and I/O buffering. Basic circuits are then composed to form macro elements such as multipliers, where the reader acquires a unified view of architectural performance through par­ allelism, and circuit performance through careful attention to circuit-level and layout design optimization. Topics in analog circuit design reflect the growing tendency for both analog and digital circuit forms to be combined on the same chip, and a careful treatment of BiCMOS forms introduces the reader to the combination of both FET and bipolar technologies on the same chip to provide improved performance.

      



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