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Semiconductor Interfaces: Formation and Properties - Proceedings of the Workkshop, Les Houches, France February 24-March 6, 1987
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(Buch) |
Dieser Artikel gilt, aufgrund seiner Grösse, beim Versand als 3 Artikel!
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| The trend towards miniaturization of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role upon semiconductor interfaces. Great advances have recently been made in the production of new thin-film materials and in the characterization of their interfacial properties down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures given by specialists at the International Winter School on "Semiconductor Interfaces: Formation and Properties", which was held at the Centre de Physique des Houches from 24 February to 6 March, 1987. The following topics are particularly emphasised: - Interface formation, including molecular beam epitaxy, the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. - Characterization down to the atomic scale using techniques such as STM, HRTEM, SEXAFS and SEELFS. - Specific physical properties of the interfaces and their prospective device applications. |
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i.d.R. innert 5-10 Tagen versandfertig
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