Übersicht			Auf mobile öffnen

Lieferstatus:	Auf Bestellung (Lieferzeit unbekannt)
Veröffentlichung:	Mai 2007
Genre:	Naturwissensch., Medizin, Technik
	C / Condensed matter / Condensed Matter Physics / Electronic devices & materials / Electronic materials / Optical and Electronic Materials / Optical Materials / Physics and Astronomy / Technische Anwendung von elektronischen, magnetischen, optischen Materialien mehr...
ISBN:	9783540296478
EAN-Code:	9783540296478
Verlag:	Springer EN
Einband:	Gebunden
Sprache:	English
Serie:	Condensed Matter #34C3 - Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series
Dimensionen:	H 279 mm / B 210 mm / D
Seiten:	136
Illustration:	X, 136 p.
Zus. Info:	EUDR exemption - product or manufacturing materials placed on the market prior to 31.12.2025.
Bewertung:	Titel bewerten / Meinung schreiben

Inhalt:

The first two subvolumes III/34Cl and C2 on the Optical Properties of Semiconductor Quantum Structures have been well received by the scientific community. They concentrated on theoretical concepts (chapter 1), experimental methods (chapter 2), III-V semiconductors (chapter 4), I-VII semiconductors (chapter 6), and IV-VI semiconductors (chapter 7) in subvolume Cl. The II-VII materials (chapter 5) have been treated in subvolume C2. The present subvolume III/34C3 finishes the review on optical properties, by adding the chapter 3 on group IV materials. There are exhaustive data on bulk materials including optical properties, starting from diamond C and going over SiC, Si, Ge, to the semimetal grey Sn, and including their alloys-see e.g. Landolt-Börnstein, New Series, Group III, Vol. 41Al 1 and 2, and A2 1 and 2. Silicon is the backbone of the worldwide semiconductor industry. It is an indirect gap material, which seriously hampers its use in light emitting or even laser diodes. There aresome ideas to overcome this problem by forming group IV quantum structures like Si/Ge superlattices or nanocrystals. This hope triggers to a large extend the applied aspects of the research on the optical properties of group IV quantum structures. Though there are also relevant publications on the optical properties of group IV quantum structures involving C or Sn, the by far largest part of work in this field is devoted to the system Si/Ge. Therefore we concentrate here on this system.