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Herausgeber: 
  • Piet Demeester
  • Pierre M. Petroff
  • K. Eberl
  • Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates 
     

    (Buch)
    Dieser Artikel gilt, aufgrund seiner Grösse, beim Versand als 3 Artikel!


    Übersicht

    Auf mobile öffnen
     
    Lieferstatus:   i.d.R. innert 7-14 Tagen versandfertig
    Veröffentlichung:  Oktober 2012  
    Genre:  Naturwissensch., Medizin, Technik 
    ISBN:  9789401041515 
    EAN-Code: 
    9789401041515 
    Verlag:  Springer Netherlands 
    Einband:  Kartoniert  
    Sprache:  English  
    Dimensionen:  H 240 mm / B 160 mm / D 22 mm 
    Gewicht:  637 gr 
    Seiten:  400 
    Zus. Info:  Paperback 
    Bewertung: Titel bewerten / Meinung schreiben
    Inhalt:
    Significant experimental work is devoted to the preparation of one and zero dimensional semiconductor structures in view of future electronic and optical devices which involve quantum effects. The aim is good control in the realisation of nanometer structures both in vertical and lateral direction. Conventional processing techniques based on lithography face inherent problems such as limited resolution and surface defects caused by reactive ion etching. br/ During the last few years several research groups started working on direct syntheses of semiconductor nanostructures by combining epitaxial growth techniques such as molecular beam epitaxy and chemical vapour deposition with pre patterning of the substrate wafers. Another idea is based on island formation in strained layer heteroepitaxy. Zero and one dimensional structures with dimensions down to a few atomic distances have been realised this way. An important point is that the size of the quantum structures is controlled within the epitaxial deposition in a self-adjusting process. br/ The main subjects of the book are: Theoretical aspects of epitaxial growth, selfassembling nanostructures and cluster formation, epitaxial growth in tilted and non-(001) surfaces, cleaved edge overgrowth, nanostructure growth on patterned silicon substrates, nanostructures prepared by selective area epitaxy or growth on patterned substrates, in-situ etching and device applications based on epitaxial regrowth on patterned substrates. br/ The experimental work mainly concentrated on GaAs/A1GaAs, GaAs/InGaAs, InGaP/InP and Si/SiGe based semiconductor heterostructures. Growth related problems received special attention. The different concepts for preparation of low dimensional structures are presented to allow direct comparison and to identify new concepts for future research work. br/

      



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